pdf | 20.76 MB | English | Isbn: B01MQDQMP0 | Author: YUE HAO | Year: 2016
Description: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. Category:Semiconductors, Microwave Electrical Engineering, Microelectronics Engineering 
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